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INTEGRATED CIRCUITS
DATA SHEET
TEA6850 IF filter / amplifier / demodulator for FM radio receivers
Preliminary specification File under Integrated Circuits, IC01 July 1994
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
FEATURES * Improved dynamic selectivity and sensitivity because of tunable IF filter * Fully integrated, frequency matched FM demodulator * High linearity * Unweighted level detector output * Soft mute * MPX output for RDS and diversity * Internal source selector. QUICK REFERENCE DATA SYMBOL VP IP DS200 supply voltage (pin 7) supply current (pin 7) dynamic selectivity for 200 kHz distance (EMF = 700 V; filter bandwidth = 50 kHz) S/N THD VO Tamb signal-to-noise ratio (f = 22.5 kHz; fm = 1 kHz) total harmonic distortion (f = 75 kHz; fm = 1 kHz) AF output signal at pin 4 (RMS value) operating ambient temperature -40 - 180 200 - 0.3 61 67 PARAMETER 7 14 22 MIN. TYP. 8.5 17.5 27 GENERAL DESCRIPTION
TEA6850
The TEA6850 is a monolithic bipolar integrated circuit for IF filtering, FM demodulation and level detection. Using IF filters tuned by the demodulated signal, dynamic selectivity and sensitivity are improved.
MAX. 10 21 -
UNIT V mA dB
- 0.5 220 +85
dB % mV C
ORDERING INFORMATION EXTENDED TYPE NUMBER TEA6850H Note 1. SOT307-2; 1996 August 26. PACKAGE PINS 44 PIN POSITION QFP MATERIAL plastic CODE SOT307(1)
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IF filter / amplifier / demodulator for FM radio receivers TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
TEA6850
Fig.2 TEA6850H (adaptive version), printed- circuit board.
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
PINNING SYMBOL RDSOUT CENABLE MPXIN MPX LVLUNW MPXSEL VP GND VGAP VUT2 VUT1 IFADJ BWADJ IFIN IFINI GAINADJ n.c. CRYSTAL GND n.c. OUT300I OUT300Q CLIM1I CLIM2I CLIM3I CLIM4I CLIM1Q CLIM2Q CLIM3Q CLIM4Q LVLADJ LVLWEI IHP60 CHPMUTE CMUTE DEMOLOOP1 DEMOLOOP2 COP2 CON2 COO1 July 1994 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 output for RDS chip enable external audio frequency input (MPX signal) audio frequency output (MPX signal) unweighted level output source selector for MPX signal supply voltage (8.5 V) ground (0 V) internal reference voltage reference voltage output reference voltage output input for IF filter frequency adjustment input for IF filter bandwidth adjustment IF signal input 1 IF signal input 2 input for mixer gain adjustment not connected crystal oscillator input oscillator ground not connected IF filter output (0) IF filter output (90) IF limiter feedback 1 IF limiter feedback 2 IF limiter feedback 3 IF limiter feedback 4 IF limiter feedback 5 IF limiter feedback 6 IF limiter feedback 7 IF limiter feedback 8 input for level adjustment weighted level output input for high-pass -3 dB adjustment output of rectified high-pass signal mute input demodulator output 1 demodulator output 2 MPX correction output 2 MPX correction input 2 MPX correction output 1 5 DESCRIPTION
TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
SYMBOL CON1 IFLOOP1 IFLOOP2 IFLOOP3 PIN 41 42 43 44 MPX correction input 1 IF loop filter output 1 IF loop filter output 2 IF loop filter output 3 DESCRIPTION
TEA6850
Fig.3 Pin configuration.
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
FUNCTIONAL DESCRIPTION The first mixer stage at the input of the circuit is for mixing the 10.7 MHz IF signal to 300 kHz. The IF filter has a resonance frequency of 300 kHz (adjustable), tunable from 50 kHz to 500 kHz, and a bandwidth of about 20 kHz to 80 kHz tunable. Static filter response see Fig.5. The limiter has a gain of approximately 90 dB, which is virtually independent from temperature change. The demodulator is frequency matched with the IF filter. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP IP Tstg Tamb Ptot VESD supply voltage supply current storage temperature operating ambient temperature total power dissipation electrostatic handling for all pins (note 1) PARAMETER - -55 -40 - - MIN. -0.3
TEA6850
MAX. +12 21 +125 +85 252 300 V
UNIT mA C C mW V
Note to the Limiting Values 1. Charge device model class B: equivalent to discharging a 200 pF capacitor through a 0 series resistor. THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER from junction to ambient in free air THERMAL RESISTANCE 65 K/W
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
DC CHARACTERISTICS VP = 8.5 V; Tamb = +25 C; all voltages referenced to ground unless otherwise specified. SYMBOL VP IP IP V1 V2 V3 V4 V5 V6 V12 V13 V14 V15 V16 V18 V21 V22 V23 V24 V25 V26 V27 V28 V29 V30 V31 V32 V33 V34 V35 V36 V37 V38 V39 V40 V41 V42 V43 V44 July 1994 supply voltage supply current (TEA6850 enable) supply current (TEA6850 disable) voltage at pin 1 voltage at pin 2 voltage at pin 3 voltage at pin 4 voltage at pin 5 voltage at pin 6 voltage at pin 12 voltage at pin 13 voltage at pin 14 voltage at pin 15 voltage at pin 16 voltage at pin 18 voltage at pin 21 voltage at pin 22 voltage at pin 23 voltage at pin 24 voltage at pin 25 voltage at pin 26 voltage at pin 27 voltage at pin 28 voltage at pin 29 voltage at pin 30 voltage at pin 31 voltage at pin 32 voltage at pin 33 voltage at pin 34 voltage at pin 35 voltage at pin 36 voltage at pin 37 voltage at pin 38 voltage at pin 39 voltage at pin 40 voltage at pin 41 voltage at pin 42 voltage at pin 43 voltage at pin 44 8 PARAMETER 7 14 320 2.1 tbn 3.3 3.3 tbn 2.1 0.98 tbn 1.8 1.8 tbn 3.0 3.2 3.2 3.9 3.9 3.9 3.9 3.9 3.9 3.9 3.9 tbn tbn 4.1 2.7 2.1 4.2 4.2 2.1 2.1 2.1 2.1 1.6 1.6 1.6 MIN. TYP. 8.5 17.5 400 2.4 tbn 3.55 3.55 tbn 2.3 1.08 tbn 2 2 tbn 3.3 3.5 3.5 4.2 4.2 4.2 4.2 4.2 4.2 4.2 4.2 tbn tbn 4.4 2.9 2.4 4.4 4.4 2.4 2.4 2.4 2.4 1.75 1.75 1.75
TEA6850
MAX. 10 21 480 2.7 tbn 3.8 3.8 tbn 2.5 1.18 tbn 2.2 2.2 tbn 3.6 3.8 3.8 4.5 4.5 4.5 4.5 4.5 4.5 4.5 4.5 tbn tbn 4.7 3.3 2.7 4.6 4.6 2.7 2.7 2.7 2.7 1.9 1.9 1.9 V
UNIT mA A V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
SYMBOL Reference voltage source V9 V10 V11 TK voltage at pin 9 voltage at pin 10 voltage at pin 11 temperature coefficient of V10 and V11 2.4 2.95 0.98 - 2.55 3.25 1.08 3.3 2.7 3.55 1.2 - PARAMETER MIN. TYP.
TEA6850
MAX.
UNIT
V V V 10-3/K
AC CHARACTERISTICS VP = 8.5 V; Tamb = +25 C; f = 10.7 MHz with fm = 1 kHz, 22.5 kHz deviaton (f = 22.5 kHz); EMF = 30 mV RMS; 50 s de-emphasis; filter bandwidth = 50 kHz overall; -6 dB gain from EMF to IF filter output (pins 21 and 22); in noise frequency band for S/N measurements 300 Hz to 15 kHz; S/N stereo measurement with ideal decoder; measurements taken in Fig.4 unless otherwise specified. SYMBOL DS100 DS200 S/N EMF EMF THD distance dynamic selectivity for 200 kHz distance signal-to-noise ratio IF signal input voltage for start of limiting (RMS value) total harmonic distortion PARAMETER dynamic selectivity for 100 kHz CONDITIONS EMF = 700 V EMF = 14 mV EMF = 700 V EMF = 14 mV mono stereo S/N = 26 dB; V5 = 5 V S/N = 46 dB; V5 = 5 V -3 db at MPX output; V5 = 5V f = 75 kHz f = 100 kHz fm = 8 kHz; f = 75 kHz D57 attenuation of third harmonic measured at pin 4 fm = 19 kHz; f = 6.75 kHz; measured at 57 kHz compared to 57 kHz f = 2 kHz EMF A14-21,22 ADC VO VO admissible maximum input voltage (RMS value) gain to IF filter output (adjustable) downconverter adjustable range MPX output voltage (RMS value) MPX output voltage ripple 1 kHz < fmod < 15 kHz 23 kHz < fmod < 53 kHz - -10 180 - - -6 - 200 - - - +6 220 2 2 dB dB mV dB dB 300 - - mV - - - 14 0.3 0.5 3 20 0.5 1 5 - % % % dB MIN. 13 10 22 18 61 54 - - - TYP. 16 12 27 22 67 57 20 130 10 MAX. - - - - - - 45 370 20 UNIT dB dB dB dB dB dB V V V
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
SYMBOL RR PARAMETER power supply ripple rejection CONDITIONS f = 200 Hz to 20 kHz; Vrmax = 100 mV (on VP); ripple at MPX output AM AM suppression fmod = 400 Hz; modulation = 30% 500 V < EMF < 100 mV RDS output (pin 1) ZO RL CL V1
tswitch
TEA6850
MIN. 38
TYP. -
MAX. -
UNIT dB
- 40 - 15 -
50 44 - - - 6 -
- -
dB dB
output impedance load resistance load capacitance RDS signal output voltage switch on time fmod = 57 kHz; f = 2 kHz; RL = ; CL = 0
1 - 50 - 500
k k pF mV ms
4 -
10.7 MHz input (pins 14 and 15) Ri Ci V14 Crystal f0 f0/f0 C0 RS T0/T0 V18 standard frequency frequency tolerance shunt capacitance equivalent series resistance temperature drift -40 C < T < +85 C - -100 - - -50 22 - - - - - +100 7 120 + 50 MHz ppm pF ppm input resistance input capacitance residual oscillator signal 3.5 - fosc/2 = 11 mHz; RG = 300 - 5 - - 6.5 5 30 k pF V
Oscillator (measured at pin 18) 22 MHz output level 13 20 40 mV
OUT300Q, I output (pins 21 and 22; ROUT300 = 33 K; see Fig.4) V21,22 |V21|-|V22| TC ZO F0 B Bmax Bmin output voltage I, Q output level difference temperature coefficient of output voltage output impedance - -10 -5 V13 = 0 V 70 - 1.26 - +10 +3 - - k Turnable filter (-40 C < T < +85 C; filter response see Fig.5) frequency temperature shift bandwidth temperature shift maximum adjustable bandwidth minimum adjustable bandwidth 20 kHz 0 0 80 kHz kHz kHz EMF = 75 mV 7 - - 12 - 3.3 14 1.5 - mV mV 10-3/K
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TEA6850
MAX.
UNIT
Level amplifier (pin 5; typical curve and adjusting range see Fig.7) ZO TC V5 output impedance temperature coefficient of output voltage output voltage = -3 dB for EMF = 200V; 2.1 EMF = 100 V EMF = 1 mV S V5 slope of output voltage level shift adjustment range 100 V < EMF < 10 mV EMF = 0 2.95 - 0.5 3.3 950 1.0 3.65 - 1.5 V mV/20 dB V 2.35 2.6 V 8 - 10 3.3 12 - k 10-3/K
Soft mute (typical curves see Fig.8) level dependence EMF EMF SM VMPX/VMPX0 I32 mute unmute start of mute ( = -3 dB) for IF input (RMS value) -3 dB adjustment range for IF input mute slope at -15 dB muting depth charge current discharge current time constant from unmuted to muted time constant from muted to unmuted high-pass dependence (see Fig.9) VMPX/VMPX0 V1 I34 V4 muting depth voltage at pin 1 (RMS value) charge current discharge current residual DC offset at MPX output f = 60 kHz; VMPX/VMPX0 = -3 dB V34 = 0 V V34 = 5 V EMF < 80 V 80 V < EMF < 2 mV MPX output (pin 4) RO RL CL V4 V4 output resistance load resistance load capacitance clipping DC voltage residual signal of 300 kHz and higher harmonics (RMS value) V4 1 V - 3 - 1.5 - - - - - - 100 - 50 7 10 k pF V mV 140 0.7 - - 200 1 - - 260 3 60 60 A A mV mV -12 165 -10 185 -8 205 dB mV 1.5 2 2.6 ms EMF < 5 V; = -3 dB for EMF = 200 V V5 = 4.5 V; V32 = 3.9 V V5 = 4.5 V; V32 = 5.1 V 10 20 0.75 13 26 1 17 34 1.3 A A ms 100 29 -35 - 32 -32 300 35 -29 V dB/Dec dB - 200 - V
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
SYMBOL CENABLE (pin 2) V2 RI voltage range input resistance chip enable chip disable Source selector isolation -0.3 1.9 100 +0.6 2.4 - PARAMETER CONDITIONS MIN. TYP.
TEA6850
MAX. +1.1 5.5 -
UNIT
V V k
(f < 12.5 kHz; mode TEA6850 signal: V6 > 1.9 V or pin not connected; mode external signal: V6 < 1.1 V) VMPX/VMPXIN isolation of external signal mode TEA6850 signal; f = 0; VMPXIN = 200 mV; f = 12.5 kHz VMPX/VMPX0 isolation of TEA6850 signal mode external signal; f = 22.5 kHz; Rg (pin 3) < 10 k; fmod = 12.5 kHz RI input resistance at pin 6 input resistance at pin 3 I6 input current Vsselect < 1.1 V V6 > 1.9 V V6 < 1.1 V 1 3 23 - - - 30 - - - 37 20 M k k A -70 -80 - dB -70 -80 - dB
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IF filter / amplifier / demodulator for FM radio receivers TEA6850
Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
TEA6850
Fig.5 IF filter frequency response.
Fig.6 High-pass frequency response (see Fig.1).
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
TEA6850
Fig.7 LEVELAMP output voltage.
Fig.8 Soft mute curve.
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
TEA6850
Fig.9 High-pass mute curve.
Fig.10 Temperature dependence of - 3 dB and THD.
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
APPENDIX Alignment procedure for the test circuit (see Fig.4) 1. Connect a spectrum analyser to pin 21 or pin 22. Set centre frequency to 300 kHz and frequency span from 200 kHz to 400 kHz. 2. Set frequency of RF-generator to 10.7 MHz, EMF-level to 4 mV RMS, modulation frequency to 1 kHz and frequency deviation to 75 kHz. 3. Turn poti P7 in the mid position. Align centre frequency of the tunable IF-filter with poti P5. The alignment is correct, if the spectrum measured at pin 21 is symmetric. 4. Set frequency deviation of RF-generator to zero (EMF = 4 mV RMS). Align the downconverter gain with poti P1. The alignment is correct, if the level at pin 21 is 2 mV RMS. 5. Short pin 36 and pin 37. Set frequency of RF-generator to 10.6 MHz respectively 10.8 MHz (EMF = 4 mV RMS, f = 0). Align bandwidth of the tunable IF-filter with poti P7. The alignment is correct, if the level measured at 200 kHz respectively 400 kHz is 21 dB below the maximum. Remove the short. 6. Set frequency of the RF-generator to 10.7 MHz, EMF-level to 20 mV RMS, modulation frequency to 1 kHz and frequency deviation to 22.5 kHz. Measure level of the 1 kHz signal at pin 4. Set the EMF-level to 200 V. Align start of mute ( - 3 dB) with poti P2. 7. Set EMF-level back to 20 mV RMS and vary the modulation frequency. Align MPX output voltage ripple (see VO in the AC CHARACTERISTICS) with poti P6.
TEA6850
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
PACKAGE OUTLINE QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
TEA6850
SOT307-2
c
y X
A 33 34 23 22 ZE
e E HE wM bp pin 1 index 44 1 bp D HD wM 11 ZD B vM B vMA 12 detail X A A2 (A 3) Lp L
A1
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.10 A1 0.25 0.05 A2 1.85 1.65 A3 0.25 bp 0.40 0.20 c 0.25 0.14 D (1) 10.1 9.9 E (1) 10.1 9.9 e 0.8 HD 12.9 12.3 HE 12.9 12.3 L 1.3 Lp 0.95 0.55 v 0.15 w 0.15 y 0.1 Z D (1) Z E (1) 1.2 0.8 1.2 0.8 10 0o
o
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT307-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-08-01
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all QFP packages. The choice of heating method may be influenced by larger plastic QFP packages (44 leads, or more). If infrared or vapour phase heating is used and the large packages are not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture in them can cause cracking of the plastic body. For more information, refer to the Drypack chapter in our "Quality Reference Handbook" (order code 9397 750 00192). Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
TEA6850
Wave soldering is not recommended for QFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering the following packages: QFP52 (SOT379-1), QFP100 (SOT317-1), QFP100 (SOT317-2), QFP100 (SOT382-1) or QFP160 (SOT322-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Preliminary specification
IF filter / amplifier / demodulator for FM radio receivers
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA6850
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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